Phase change nanoelectronic devices

Dr Ou has his interest on nanoelectronic devices based on nonvolatile phase change materials from working for the semiconductor company, Macronix International Taiwan, funded project on “phase change memory” in 2007.
GST80nm_JYOu
The SEM image with typical I-V characteristic of a lateral Ge2Sb2Te5 device with the dimension of 200nm×80nm×30nm.

After Dr Ou joined Optoelectronic Research Centre, he worked with the world leading team of phase change material, Dr Behrad Gholipour, Dr Chung-Che Huang and Professor Dan Hewak on development of CVD-grown phase change nanodevices.

  • Germanium antimony lateral nanowire phase change memory by chemical vapor deposition
    B. Gholipour, C. C. Huang, J. Y. Ou, D. W. Hewak
    Physica status solidi (b) 250 (5), 994 (2013) doi:10.1002/pssb.201248515
  • Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application
    C. C Huang, B. Gholipour, K. Knight, J. Y. Ou, D. W. Hewak
    Advances in OptoElectronics 2012, 840348 (2012) doi:10.1155/2012/840348
  • Electrical phase change of CVD-grown Ge-Sb-Te thin film device
    C. C. Huang, B. Gholipour, J. Y. Ou, K. J. Knight, and D. W. Hewak
    Electron. Lett.47, 288 (2011) doi: 10.1049/el.2010.3276